FGH40T65SQD Datasheet, ON Semiconductor

* Max Junction Temperature 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(s.

where low conduction and switching losses are essential. Features
* Max Junction Temperature 175°C
* Positive Te.

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are es.